1 elm340703a - n 4 - g e neral description f eatures maximum a bsolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction - to - a mbient r ja 5 0 c /w parameter symbol limit unit note drain - s ource voltage vds -3 0 v gate - s ource v oltag e vgs 20 v conti nuous drain current t a = 25 c id -15 a t a = 70 c -11 pulsed d rain current idm - 6 9 a 3 avalanche current ia s -69 a avalanche energy l=0.1mh ea s 238 mj power dissipation t c = 25 c pd 2.5 w t c = 70 c 1.6 j unction and storage temperature range tj , tstg - 55 to 150 c pin configuration c ircuit so p - 8 (top vi ew) pin no. pin name 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain 4 3 2 1 5 6 7 8 single p-channel mosfet elm340703a - n uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. internal esd protection is included. ? vds =- 3 0v ? id = - 15 a ? rds (on) < 7m (vgs =- 1 0 v) ? rds (on) < 12m (vgs =- 4.5 v) ? esd protect ed s d g t a = 25 c . u nless otherwise noted.
2 elm340703a - n 4 - electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain - s ource breakdown voltage bvdss id =- 25 0 a , vgs = 0v -3 0 v zero g ate voltage drain current idss vds =- 24 v, vgs = 0v -1 a vds =- 2 0 v, vgs = 0v, t a = 12 5 c -10 gate - b ody leakage current ig s s vds = 0v , vgs = 16 v 3 0 a gate t hreshold voltage vg s( th) vds = vgs , id =- 25 0 a -1.0 -1.7 -3.0 v static drain - s ource on - r esistance r d s (o n ) vgs =- 10 v, i d =- 1 5 a 4.8 7.0 m 1 vgs =- 4 .5v, id =- 10 a 6.8 12.0 forward transconductance gfs vds =- 5 v, id = - 1 5 a 25 s 1 diode forward voltage vsd i s = -15a , vgs = 0v -1.2 v 1 max. body - d iode continuous c urrent is -15 a dynamic parameters input capacitance c iss vgs = 0v, vds =- 1 5 v, f = 1mh z 5200 pf output capacitance c oss 885 pf reverse transfer capacitance c r ss 789 pf switching parameters total gate charge q g vgs =- 10 v, vds =- 15 v id = - 1 5 a 119 nc 2 gate - s ource charge q gs 14 nc 2 gate - d rain charge q gd 31 nc 2 turn - o n delay time t d (on) vgs =- 10 v, vds =- 1 5 v id = - 15 a , rgen = 6 26 ns 2 turn - o n rise t ime t r 29 ns 2 turn - o ff delay time t d ( of f ) 225 ns 2 turn - o ff fall t ime t f 124 ns 2 reverse recovery time trr if=-15a, dif/dt=100a/ s 35 ns reverse recovery charge qrr 2 0 nc single p-channel mosfet note : 1. pulsed width 300 sec and duty cycle 2%. 2. independent of operating temperature . 3. pulsed width limited by maximum junction temperature. t a = 25 c . u nless otherwise noted.
3 elm340703a - n 4 - typical electrical and thermal characteristics single p-channel mosfet p - channel logic level enhancement mode field effect transistor p z07 03ev sop - 8 halogen - free & lead - fr ee niko - sem 3 d - 42 - 5 rev 1 .0 125 -20 25 0 12 24 36 48 60 0 1 2 3 4 5 0 2 4 6 8 10 0 25 50 75 100 i d =-15a v ds =-15v 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 v gs =-10v i d =-15a vgs =-2.5v vgs =-4.5v vgs =-5v vgs =-10v vgs =-3v vgs =-7v 0 12 24 36 48 60 0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 0 0.002 0.004 0.006 0.008 0.01 id = -15a 0 12 24 36 60 0 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 48 vgs = -10v vgs = -4.5v output characteristics - i d , drain - to - source current(a) - v d s , drain - to - source voltage(v) on - resistance vs drain current r ds(on) on - resistance(ohm) - i d , drain - to - source current on - resistance vs gate - to - source r ds(on) on - resistance(ohm) - v g s , gate - to - source voltage(v) on - resistance vs temperature normalized drain to source on - resistance t j , junction temperature( ? c) transfer characteristics - i d , drain - to - source current(a) - v g s , gate - to - source voltage(v) gate charge characteristics characteristics - v gs , gate - to - source voltage(v) qg , total gate charge(nc)
4 elm340703a - n 4 - single p-channel mosfet p - channel logic level enhancement mode field effect transistor p z07 03ev sop - 8 halogen - free & lead - fr ee niko - sem 4 d - 42 - 5 rev 1 .0 1m s 10s 1s dc 100m s 10m s 0.01 0.1 1 10 100 0.1 1 10 100 note : 1.v gs = 10v 2.t a =25 c 3.r ja = 50 c/w 4.single pulse operation in this area is lim ited by r ds(on) 0 40 80 120 160 200 0.001 0.01 0.1 1 10 100 single pulse r ja = 50 c/w t a =25 c single pulse duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 1.00e-02 1.00e-01 1.00e+00 1.00e+01 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 ciss coss crss 0.00e+00 1.00e+03 2.00e+03 3.00e+03 4.00e+03 5.00e+03 6.00e+03 7.00e+03 0 5 10 15 20 25 30 25 125 1.00e-01 1.00e+00 1.00e+01 1.00e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 capacitance characteristic - v d s , drain - to - source voltage(v) body diode forward voltage vs source current - v sd , source - to - drain voltage(v) transient thermal response curve single pulse time(s) safe operating area - v d s , drain - to - source voltage(v) notes 1.duty cycle, d= t1 / t2 2.rthj a = 50 /w 3.tj - t a = p*rthj a (t) 4.zthj a (t) = r(t)*zthj a single pulse maximum power dissipation c , capacitance(pf) - i s , source current(a) t 1 , square wave pulse duration[sec] r(t) , mormalized effective transient thermal resistance - i d , drain current(a) power(w)
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